STU312D Datasheet, PDF (1/11 Pages) SamHop Microelectronics Corp. – Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel)

S TU312D
S amHop Microelectronics C orp.
Oct 08 2008
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y (N-C hannel)
VDS S
ID
R DS (ON) ( m Ω ) Max
24 @ VGS = 10V
30V
18A
36 @ VGS = 4.5V
P R ODUC T S UMMAR Y (P -C hannel)
VDS S
-30V
ID
-14A
R DS (ON) ( m Ω ) Max
34 @ VGS = -10V
54 @ VGS = -4.5V
D1/D2
D1
D2
S1
G1
S2 _G2
TO-252-4L
G1
G2
S 1 N-ch
S 2 P-ch
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol N-C hannel P-C hannel Unit
Drain-S ource Voltage
VDS
30
-30
V
Gate-S ource Voltage
VGS
24
24
V
25 C
18
-14
A
Drain C urrent-C ontinuous @ Tc
ID
70 C
15
-12
A
-P ulsed ^a
IDM
50
-50
A
Drain-S ource Diode Forward C urrent
IS
10
-6
A
Tc= 25 C
11
Maximum P ower Dissipation
PD
W
Tc= 70 C
7.7
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 175
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
13.6
C /W
Thermal R esistance, Junction-to-Ambient
R JA
120
C /W
1