STS2309 Datasheet, PDF (3/7 Pages) SamHop Microelectronics Corp. – P-Channel E nhancement Mode Field Effect Transistor

S TS 2309
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ^C Max Unit
5 DRAIN-SOURCE DIODE CHARACTERISTICS ^b
Diode Forward Voltage
VSD VGS = 0V, Is =-1.25A
-0.85 -1.2 V
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
20
-V GS =5V
16
-V GS =4V
12
-V GS =3V
8
-V GS =10,9,8,7,6V
4
-V GS =2V
0
0
1
2
3
4
5
6
-V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
15
25 C
12
-55 C
9
T j=125 C
6
3
0
0.0 0.8 1.6 2.4 3.2 4.0 4.8
-V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
500
400
C is s
300
200
100
C rss
0
0 5 10
C oss
15 20 25 30
-V DS , Drain-to S ource Voltage (V )
F igure 3. C apacitance
2.2
V G S =-4.5V
I D =-2 . 3 A
1.8
1.4
1.0
0.6
0.2
0
-50 -25 0 25 50 75 100 125
T j( C )
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with
Te mpe ra ture
3