STS2309 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – P-Channel E nhancement Mode Field Effect Transistor

S amHop Microelectronics C orp.
S TS 2309
Nov 22, 2004
P-C hannel E nhancement Mode Field E ffect Trans is tor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m W ) Max
-20V
-2.3A
130 @ VGS = -4.5V
190@ VGS = -2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S OT-23 package.
S OT-23
D
S
G
D
G
S
AB S OL UTE MAXIMUM R ATINGS (TA=25 C unles s otherwis e noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
-20
V
Gate-S ource Voltage
VGS
10
V
Drain C urrent-C ontinuous^a @ TJ=25 C
ID
-2.3
A
-P ulsed ^b
IDM
-8
A
Drain-S ource Diode Forward C urrent ^a
IS
-1.25
A
Maximum P ower Dissipation ^a
PD
1.25
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a
R thJA
100
C /W
1