SDT452 Datasheet, PDF (3/5 Pages) SamHop Microelectronics Corp. – P -Channel E nhancement Mode F ield E ffect Transistor

S DT452AP
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ ^C Max Unit
DRAIN-SOURCE DIODE CHARACTERISTICS ^b
Diode Forward Voltage
VSD VGS = 0V, Is =-5.3A
5
-0.84 -1.3 V
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
10
-V GS =10,9,8,7,6V
8
-V GS =5V
6
4
2
0
0 0.5 1.0 1.5 2.0 2.5 3.0
-V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
20
-55 C
25 C
16
T j=125 C
12
8
4
0
0
0.5 1
1.5 2
2.5 3
-V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
3000
2500
2000
1500
1000
500
0
0
5 10 15
C is s
C oss
C rss
20 25 30
-V DS , Drain-to S ource Voltage (V )
F igure 3. C apacitance
1.8
V GS =-10V
1.6 ^ID=-5.3A
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with
Te mpe ra ture
3