SDT452 Datasheet, PDF (1/5 Pages) SamHop Microelectronics Corp. – P -Channel E nhancement Mode F ield E ffect Transistor

S DT452AP
S amHop Microelectronics C orp.
Augus t , 2002
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m W ) TYP
-30V -5.3A
52 @ VGS = -10V
85 @ VGS = -4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S OT-223 P ackage.
D
D
S
D
G
S OT-223
D
S
G
S OT-223 (J 23Z)
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ TJ=125 C
a
-P ulsed
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation @ Tc=25 C
Derate above 25 C
Operating and S torage Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
-30
20
-5.3
-16
5.3
3
0.08
-65 to 150
Unit
V
V
A
A
A
W
W/ C
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
12
C /W
Thermal R esistance, Junction-to-Ambient
R JA
42
C /W
1