STM4532 Datasheet, PDF (2/11 Pages) SamHop Microelectronics Corp. – Dual E nhancement Mode Field Effect Transistor (N and P Channel)

S TM4532
N-Channel E LE CTR ICAL CHAR ACTE R IS TICS (TA⁼²⁵ C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ ^C Max Unit
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
BVDSS
Zero Gate Voltage Drain C urrent
IDSS
Gate-Body Leakage
IGSS
ON CHARACTERISTICS ^b
Gate Threshold Voltage
V G S (th)
Drain-S ource On-S tate R esistance R DS(ON)
On-S tate Drain Current
ID(ON)
Forward Transconductance
g_FS
DYNAMIC CHARACTERISTICS ^c
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS ^c
Turn-On Delay Time
tD(ON)
R ise Time
tr
Turn-Off Delay Time
tD(O F F )
Fall Time
tf
Total Gate C harge
Qg
Gate-S ource Charge
Qgs
Gate-Drain C harge
Qgd
VGS _=0V, ID =250uA
VDS =24V, VGS =0V
VGS ₌ 20V, VDS =0V
VDS =VGS , ID = 250uA
VGS =10V, ID = 6A
VGS =4.5V, ID= 5.2A
VDS = 5V, VGS = 10V
VDS = 10V, ID =6.0A
VDS =8V, VGS = 0V
f =1.0MHZ
VDD = 10V,
ID = 1A,
VGEN = 4.5V,
R L = 10 ^ohm
R GEN = 6 ^ohm
VDS =10V, ID = 6A,
VGS =4.5V
30
V
1 uA
100 nA
0.8
28
40
15
6
1.8 V
40 m ohm
50 m ohm
A
S
510
PF
155
PF
127
PF
15.6
ns
9.7
ns
26.3
ns
26.9
ns
9.3
nC
2.5
nC
3.2
nC
2