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STM4532 Datasheet, PDF (1/11 Pages) SamHop Microelectronics Corp. – Dual E nhancement Mode Field Effect Transistor (N and P Channel)
S TM4532
S amHop Microelectronics C orp.
Mar.30, 2005 V er1.1
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y (N-C hannel)
VDS S
ID
R DS (ON) ( m W ) Max
30V
5.5A
40@ VGS = 10V
50@ VGS = 4.5V
P R ODUC T S UMMAR Y (P -C hannel)
VDS S
ID
R DS (ON) ( m W ) Max
-30V -4.5A
55@ VGS = -10V
85@ VGS = -4.5V
D1 D1 D2 D2
8
7
6
5
S O-8
1
1234
S1 G1 S2 G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol N-C hannel P-C hannel Unit
Drain-S ource Voltage
VDS
30 -30
V
Gate-S ource Voltage
VGS
20
20
V
Drain C urrent-C ontinuous a @ TJ=125 C
ID
5.5 -4.5
A
-P ulsed b
IDM
23 -18
A
Drain-S ource Diode Forward C urrent a
IS
1.7 -1.7
A
Maximum P ower Dissipation a
PD
2.0
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R JA
62.5
C /W
1