STM102D Datasheet, PDF (2/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

STM102D
Ver 1.0
N-Channel ELECTRICAL CHARACTERISTICS (TC=25^°C unless otherwise noted⁾
4 Symbol _Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
100
V
1
uA
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
g_FS
Forward Transconductance
DYNAMIC CHARACTERISTICS ^c
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS ^c
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=1.0A
VGS=4.5V , ID=0.8A
VDS=10V , ID=1.0A
VDS=25V,VGS=0V
f=1.0MHz
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=1A,VGS=10V
VDS=50V,ID=1A,VGS=4.5V
VDS=50V,ID=1A,
VGS=10V
1.0 1.7
3
V
173 216 m ohm
243 328 m ohm
2
S
305
pF
36
pF
23
pF
7.5
ns
8.2
ns
16
ns
4
ns
5.5
nC
3.2
nC
0.95
nC
1.7
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage ^b
VGS=0V,IS=2.0A
0.83 1.3
V
Nov,30,2011
2
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