STM102D Datasheet, PDF (1/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

G
P
STM102D
Sa mHop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Ver 1.0
PRODUCT SUMMARY (N-Channel)
VDSS
ID
RDS(ON) (mΩ) Max
100V
2.0A
216 @ VGS=10V
328 @ VGS=4.5V
PRODUCT SUMMARY (P-Channel)
VDSS
ID
RDS(ON) (mΩ) Max
-100V -1.3A
547 @ VGS=-10V
614 @ VGS=-4.5V
S O-8
1
D2 5
D2 6
D1 7
D1 8
4 G2
3 S2
2 G1
1 S1
ABSOLUTE MAXIMUM RATINGS (TC=25^°C unless otherwise noted⁾
Symbol Parameter
N-Channel P-Channel
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
100
-100
±20
±20
I_D
Drain Current-Continuous ^a
TC=25°C
TC=70°C
2.0
-1.3
1.6
-1.0
I_DM
-Pulsed ^b
7.2
-4.7
E_AS
Sigle Pulse Avalanche Energy ^d
16
25
P_D
Maximum Power Dissipation ^a
T_C=25°C
T_C=70°C
2
1.28
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient ^a
62.5
°C/W
Details are subject to change without notice.
1
Nov,30,2011
www.samhop.com.tw