STK900 Datasheet, PDF (2/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STK900
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage ^d VGS=0V , ID=10mA
100
IDSS
Zero Gate Voltage Drain Current
VDS=80V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=250uA
1
RDS(ON)
g_FS
Drain-Source On-State Resistance
Forward Transconductance
VGS=10V , ID=0.5A
VGS=4.5V , ID=0.5A
VDS=10V , ID=0.5A
DYNAMIC CHARACTERISTICS ^b
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS ^b
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD=45V
ID=0.5A
VGS=10V
RGEN= 6 ohm
VDS=45V,ID=0.5A,VGS=10V
VDS=45V,ID=0.5A,VGS=4.5V
VDS=45V,ID=0.5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=0.1A
Notes
a.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25^°C,L=0.5mH,VDD = 40V.(See Figure13)
d.Pulse Test:Pulse Width <_ 1us, Duty Cycle <_ 1%.
Typ
1.7
1.50
1.75
0.88
64
17.4
8.5
7.5
8.5
65
12
1.9
1.23
0.43
0.62
0.8
Max Units
V
1
uA
±10 uA
3
1.90
2.20
V
ohm
ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
1.3 V
Jun,22,2011
2
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