STK900 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

Gre
Pro
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STK900
Ver 1.0
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (Ω) Max
100V
1A
1.9 @ VGS=10V
2.2 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
D
SOT-89
S
D
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage ^d
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous
I_DM
-Pulsed ^a
TA=25°C
TA=70°C
E_AS
Single Pulse Avalanche Energy ^c
P_D
Maximum Power Dissipation
T_A=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient
Limit
100
±20
1
0.8
3.16
1.1
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Jun,22,2011
www.samhop.com.tw