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| RU60E6H Datasheet, PDF (5/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET | |||
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Typical Characteristics
Drain-Source On Resistance
RU60E6H
Source-Drain Diode Forward
Tj - Junction Temperature (°C)
Capacitance
VSD - Source-Drain Voltage (V)
Gate Charge
VDS - Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
5
Rev. Aâ APR., 2011
QG - Gate Charge (nC)
www.ruichips.com
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