RU60E6H Datasheet, PDF (1/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

RU60E6H
N-Channel Advanced Power MOSFET
MOSFET
Features
• 60V/6A,
RDS (ON) =31mΩ (Type) @ VGS=10V
RDS (ON) =37mΩ (Type) @ VGS=4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• ESD Protected
• Lead Free and Green Available
Pin Description
SOP-8
Applications
• Power Management.
• Switch Applications.
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
T_C=25°C
Mounted on Large Heat Sink
I_DP
300μs Pulse Drain Current Tested
T_C=25°C
I_D
P_D
②
R_θJA
Continuous Drain Current
T_C=25°C
T_C=70°C
Maximum Power Dissipation
T_C=25°C
T_C=70°C
Thermal Resistance-Junction to Ambient
Rating
60
±20
150
-55 to 150
6
①
24
6
4.6
2.5
1.6
50
Unit
V
°C
°C
A
A
A
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2011
www.ruichips.com