RU30E4B Datasheet, PDF (5/8 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

RU30E4B
Typical Characteristics
Output Characteristics
10
10V
8V
8
6V
5V
6
4
3V
2
1V
0
0
1
2
3
4
5
V_DS - Drain-Source Voltage (V)
Drain-Source On Resistance
2.5
V_GS=10V
I_DS=1A
2.0
1.5
1.0
0.5
T_J=25°C
Rds(on)=30mΩ
0.0
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
Capacitance
500
Frequency=1.0MHz
400
300
Ciss
200
100
Coss
Crss
0
1
10
100
V_DS - Drain-Source Voltage (V)
Ruichips Semiconductor Co., Ltd
Rev. B– JAN., 2014
5
Drain-Source On Resistance
150
120
90
60
4.5V
10V
30
0
0
1
2
3
4
5
I_D - Drain Current (A)
Source-Drain Diode Forward
10
1
T_J=150°C
0.1
T_J=25°C
0.01
0.2 0.4 0.6 0.8
1
1.2 1.4
V_SD - Source-Drain Voltage (V)
10
9 ^VDS=24V
IDS=1A
8
Gate Charge
7
6
5
4
3
2
1
0
0
2
4
6
8
Q_G - Gate Charge (nC)
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