RU30E4B Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

RU30E4B
N-Channel Advanced Power MOSFET
Features
• 30V/4A,
R_{DS (ON)} =30mΩ(Typ.)@V_GS=10V
R_{DS (ON)} =55mΩ(Typ.)@V_GS=4.5V
• Super High Dense Cell Design
• ESD protected(Rating 2KV HBM)
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Load Switch
Pin Description
D
G
S
SOT23
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (T_A=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP^①
300μs Pulse Drain Current Tested
I_D^②
Continuous Drain Current(V_GS=10V)
P_D
Maximum Power Dissipation
R_θJC
Thermal Resistance-Junction to Case
R_θJA^{③ Thermal Resistance-Junction to Ambient}
Drain-Source Avalanche Ratings
E_AS^④
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
Rev. B– JAN., 2014
1
S
N-Channel MOSFET
Rating
Unit
T_A=25°C
30
V
±12
150
°C
-55 to 150 °C
1.1
A
T_A=25°C
T_A=25°C
T_A=70°C
T_A=25°C
T_A=70°C
16
A
4
A
3.2
1
W
0.64
-
°C/W
125
°C/W
TBD
mJ
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