RU20120L Datasheet, PDF (5/8 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

℃
RU20120L
Typical Characteristics
Output Characteristics
300
10V
250
200
4.5V
150
3V
100
50
1V
0
0
1
2
3
4
5
V_DS - Drain-Source Voltage (V)
Drain-Source On Resistance
2.5
V_GS=10V
I_D=60A
2.0
1.5
1.0
0.5
T_J=25°C
Rds(on)=2.3mΩ
0.0
-50 -25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Capacitance
4000
3500
Frequency=1.0MHz
3000
2500
2000
Ciss
1500
1000
Coss
500
Crss
0
1
10
100
V_DS - Drain-Source Voltage (V)
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2012
5
Drain-Source On Resistance
10
8
6
4.5V
4
2
0
0
100
10V
50
100
150
I_D - Drain Current (A)
Source-Drain Diode Forward
T_J=175°C
10
1
T_J=25°C
0.1
0.2 0.4 0.6 0.8
1
1.2 1.4
V_SD - Source-Drain Voltage (V)
10
9 ^VDS=16V
IDS=60A
8
Gate Charge
7
6
5
4
3
2
1
0
0
10
20
30
Q_G - Gate Charge (nC)
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