RU20120L Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

RU20120L
N-Channel Advanced Power MOSFET
Features
• 20V/120A,
R_{DS (ON)} =2.3mΩ(Typ.)@V_GS=10V
R_{DS (ON)} =4.2mΩ(Typ.)@V_GS=4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
Applications
• Power Management
• DC-DC Converters
TO252
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (T_C=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP^①
300μs Pulse Drain Current Tested
I_D^②
Continuous Drain Current(V_GS=10V)
P_D
Maximum Power Dissipation
R_θJC
Thermal Resistance-Junction to Case
R_θJA
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
E_AS^③
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2012
1
N-Channel MOSFET
Rating
Unit
T_C=25°C
20
V
±20
175
°C
-55 to 175 °C
120
A
T_C=25°C
T_C=25°C
T_C=100°C
T_C=25°C
T_C=100°C
480
A
120
A
93
103
W
52
1.45
°C/W
100
°C/W
64
mJ
www.ruichips.com