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| RU1HE3H Datasheet, PDF (4/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET | |||
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Typical Characteristics
Output Characteristics
RU1HE3H
Drain-Source On Resistance
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
ID - Drain Current (A)
Gate Threshold Voltage
VGS - Gate-Source Voltage (V)
Tj - Junction Temperature (°C)
Copyright© Ruichips Semiconductor Co., Ltd
4
Rev. Aâ JUL., 2011
www.ruichips.com
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