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RU1HE3H Datasheet, PDF (1/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET | |||
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RU1HE3H
N-Channel Advanced Power MOSFET
MOSFET
Features
⢠100V/3A,
RDS (ON) =135m⦠(Typ.) @ VGS=10V
RDS (ON) =150m⦠(Typ.) @ VGS=4.5V
⢠Super High Dense Cell Design
⢠Reliable and Rugged
⢠ESD Protected
⢠Lead Free and Green Available
Pin Description
SOP-8
Applications
⢠Converters
⢠LED Backlight
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
TA=25°C
ID
PD
â¡
RθJA
Continuous Drain Current
TA=25°C
TA=70°C
Maximum Power Dissipation
TA=25°C
TA=70°C
Thermal Resistance-Junction to Ambient
Rating
100
±20
150
-55 to 150
3
â
9
3
2.4
2.5
1.6
50
Unit
V
°C
°C
A
A
A
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. Aâ JUL., 2011
www.ruichips.com
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