RUS1H20R Datasheet, PDF (2/5 Pages) Ruichips Semiconductor Co., Ltd – Power Schottky Barrier Diode

RUS1H20R
Electrical Characteristics (T_C=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
Static Characteristics
①
I_R
Reverse Leakage Current
①
V_F ^{Zero Gate Voltage Drain Current}
V_R=100V, T_C=25°C
V_R=100V, T_C=125°C
I_F=5A, T_C=25°C
I_F=5A, T_C=125°C
I_F=10A, T_C=25°C
I_F=10A, T_C=125°C
Notes: Pulse test ; Pulse width≤300µs, duty cycle≤2%.
RUS1H20R
Unit
Min. Typ. Max.
100 µA
5 mA
0.65 -
V
0.60 -
V
0.75 0.8 V
0.66 0.7 V
Ordering and Marking Information
Device
RUS1H20R
Marking Package Packaging
RUS1H20R TO-220
Tube
Quantity
50
Reel Size Tape width
-
-
Copyright© Ruichips Semiconductor Co., Ltd
2
Rev. A– JUL., 2012
www.ruichips.com