RUS1H20R Datasheet, PDF (1/5 Pages) Ruichips Semiconductor Co., Ltd – Power Schottky Barrier Diode

Features
• V_RRM= 100V
I_F(AV)=2x 10A
• Low Power Loss and High Efficiency
• High Surge Capability
• Low Leakage Current
• Low Forward Voltage Drop
• Lead Free and Green Devices Available
RUS1H20R
Power Schottky Barrier Diode
MOSFET
Pin Description
TO-220
Applications
• Rectifiers in SMPS
• Free Wheeling Diode
• DC-DC Converters
Schottky Barrier Diode
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
V_RRM
Maximum Repetitive Reverse Voltage
V_R
Maximum DC Reverse Voltage
I_F(AV)
Average Rectified Forward Current,per ^Device
T_C=130°C
per Diode
I_FSM
T_STG
Peak Forward Surge Current,8.3mS Half Sine Wave
Storage Temperature Range
T_J
Operating Junction Temperature
Mounted on Large Heat Sink
R_θJC
Thermal Resistance-Junction to Case per Diode
Rating
100
100
20
10
150
-55 to 150
150
1.5
Unit
V
A
A
A
°C
°C
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2012
www.ruichips.com