RUS1H10R Datasheet, PDF (2/6 Pages) Ruichips Semiconductor Co., Ltd – High Efficiency Barrier Rectifier

RUS1H10R
Electrical Characteristics (T_C=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RUS1H10R
Unit
Min. Typ. Max.
Static Characteristics
V_(BR)R^② Reverse Breakdown Voltage
I_R=300µA
100
I_R^② Reverse Leakage Current
V_R=100V, T_C=25°C
V_R=100V, T_C=125°C
V
300
µA
5
mA
I_F=5A, T_C=25°C
0.45 0.55
V
V_F^② Forward Voltage Drop
I_F=5A, T_C=125°C
I_F=10A, T_C=25°C
0.38 0.47
V
0.59 0.70
V
I_F=10A, T_C=125°C
0.49 0.60
V
Notes:
①For T_C > 25°C the derating of V_R and I_F has to be considered.
②Pulse test, pulse width≤300µs, duty cycle≤2%.
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
2
www.ruichips.com