RUS1H10R Datasheet, PDF (1/6 Pages) Ruichips Semiconductor Co., Ltd – High Efficiency Barrier Rectifier

Features
• V_RRM= 100V
I_F(AV)=2x 10A
• HEBR^® Technology
• Ultra-Low Forward Voltage Drop
• Low Power Loss and High Efficiency
• High Surge Capability
• Low Leakage Current
• Lead Free and Green Devices Available
Applications
• Rectifiers in SMPS
• Free Wheeling Diode
• DC-DC Converters
RUS1H10R
High Efficiency Barrier Rectifier
Pin Description
4
1
2 _{3 TO220}
Absolute Maximum Ratings
High Efficiency Barrier Rectifier
Symbol
Parameter
Rating
Unit
Common Ratings (T_C=25°C Unless Otherwise Noted)
V_RRM^①
V_R^①
V_R(RMS)^①
I_F(AV)
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
RMS Reverse Voltage
per Device
Average Rectified Forward Current, T_C=130°C
per Diode
I_FSM
T_STG
T_J
Peak Forward Surge Current,8.3ms Half Sine Wave
Storage Temperature Range
Operating Junction Temperature Range
Mounted on Large Heat Sink
100
V
100
V
70
V
20
A
10
A
250
A
-55 to 150 °C
150
°C
R_θJC
Thermal Resistance-Junction to Case
R_θJA
Thermal Resistance-Junction to Ambient
1
°C/W
62.5
°C/W
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
1
www.ruichips.com