RU1H7H Datasheet, PDF (2/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

RU1H7H
Electrical Characteristics (T_A=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU1H7H
Unit
Min. Typ. Max.
Static Characteristics
BV_DSS Drain-Source Breakdown Voltage V_GS=0V, I_DS=250µA
100
I_DSS Zero Gate Voltage Drain Current ^{VDS=100V, VGS=0V}
T_J=85°C
V_GS(th) Gate Threshold Voltage
V_DS=V_GS, I_DS=250µA
2
I_GSS Gate Leakage Current
V_GS=±20V, V_DS=0V
③
R_DS(ON)
Drain-Source On-state Resistance
V_GS=10V, I_DS=5A
V
1
µA
30
3
4
V
±100 nA
40 45 mΩ
Diode Characteristics
③
V_SD ^{Diode Forward Voltage}
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
④
Dynamic Characteristics
R_G Gate Resistance
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
t_d(ON) Turn-on Delay Time
t_r Turn-on Rise Time
t_d(OFF) Turn-off Delay Time
t_f Turn-off Fall Time
④
Gate Charge Characteristics
Q_g Total Gate Charge
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
I_SD=1A, V_GS=0V
ISD=5A, dlSD/dt=100A/µs
V_GS=0V,V_DS=0V,F=1MHz
VGS=0V,
VDS=50V,
Frequency=1.0MHz
VDD=50V, RL=10Ω,
IDS=5A, VGEN=10V,
RG=6Ω
VDS=80V, VGS=10V,
IDS=5A
1.2 V
100
ns
430
nC
2.8
Ω
2100
250
pF
115
22
76
ns
60
23
44
10
nC
20
Notes:
Pulse width limited by safe operating area.
②When mounted on 1 inch square copper board, t ≤10sec.
③Pulse test ; Pulse width≤300µs, duty cycle≤2%.
④Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
2
Rev. A– JUL., 2012
www.ruichips.com