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RU1H7H Datasheet, PDF (1/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET | |||
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Features
⢠100V/6A,
RDS (ON) =40m⦠(Typ.) @ VGS=10V
⢠Super High Dense Cell Design
⢠Reliable and Rugged
⢠Lead Free and Green Available
RU1H7H
N-Channel Advanced Power MOSFET
MOSFET
Pin Description
SOP-8
Applications
⢠SMPS
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
TA=25°C
ID
PD
â¡
RθJA
Continuous Drain Current(VGS=10V)
TA=25°C
TA=70°C
Maximum Power Dissipation
TA=25°C
TA=70°C
Thermal Resistance-Junction to Ambient
Rating
100
±20
150
-55 to 150
3.9
â
24
6
4.7
3.1
2
40
Unit
V
°C
°C
A
A
A
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. Aâ JUL., 2012
www.ruichips.com
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