RGT8NS65D Datasheet, PDF (9/12 Pages) Rohm – 650V 4A Field Stop Trench IGBT

RGT8NS65D
lElectrical Characteristic Curves
Data Sheet
Fig.17 Typical Diode Forward Current
vs. Forward Voltage
12
10
8
6
4
2 ^Tj^{= 175ºC}
T_j= 25ºC
0
0 0.5 1 1.5 2 2.5 3
Forward Voltage : V_F[V]
Fig.18 Typical Diode Reverse Recovery Time
vs. Forward Current
120
100
80 _{Tj= 175ºC}
60
40
20
T_j= 25ºC
0
0
2
4
V_CC=400V
di_F/dt=200A/µs
Inductive ｌoad
6
8
10
Forward Current : I_F [A]
Fig.19 Typical Diode Reverse Recovery Current
vs. Forward Current
10
8
6 T_j= 175ºC
4
T_j= 25ºC
2
0
0
2
4
V_CC=400V
di_F/dt=200A/µs
Inductive ｌoad
6
8
10
Forward Current : I_F [A]
Fig.20 Typical Diode Reverse Recovery Charge
vs. Forward Current
0.5
V_CC=400V
di_F/dt=200A/µs
0.4 ^{Inductive ｌoad}
0.3
T_j= 175ºC
0.2
0.1
T_j= 25ºC
0
0
2
4
6
8
10
Forward Current : I_F [A]
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2014.05 - Rev.A