RGT8NS65D Datasheet, PDF (7/12 Pages) Rohm – 650V 4A Field Stop Trench IGBT

RGT8NS65D
lElectrical Characteristic Curves
Data Sheet
Fig.9 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
20
T_j= 25ºC
Fig.10 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
20
T_j= 175ºC
15
I_C= 8A
15
I_C= 8A
10
I_C=IC4=8AA
I_C= 2A
5
10
I_C= 4A
I_C= 2A
5
0
5
10
15
20
Gate To Emitter Voltage : V_GE [V]
0
5
10
15
20
Gate To Emitter Voltage : V_GE [V]
Fig.11 Typical Switching Time
vs. Collector Current
1000
Fig.12 Typical Switching Time
vs. Gate Resistance
1000
100
10
t_d(off)
t_f
t_r
t_d(on)
V_CC=400V, V_GE=15V
R_G=50Ω, T_j=175ºC
Inductive ｌoad
1
0
2
4
6
8
10
Collector Current : I_C [A]
100 ^tf
t_d(off)
10
t_d(on)
t_r
1
0
10
V_CC=400V, I_C=4A
V_GE=15V, T_j=175ºC
Inductive ｌoad
20
30
40
50
Gate Resistance : R_G [Ω]
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2014.05 - Rev.A