 English |
|
|
|
|
|
|
|
| SCT3060AL Datasheet, PDF (7/14 Pages) Rohm – N-channel SiC power MOSFET | |||
| |||
| ◁ |
SCT3060AL
ï¬Electrical characteristic curves
Datasheet
Fig.8 Typical Transfer Characteristics (I)
100
VDS = 10V
Pulsed
10
1
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= ï25ºC
0.1
Fig.9 Typical Transfer Characteristics (II)
40
VDS = 10V
Pulsed
30
20
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
10
Ta= ï25ºC
0.01
0 2 4 6 8 10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
0
0 2 4 6 8 10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
Fig.10 Gate Threshold Voltage
vs. Junction Temperature
6
VDS = 10V
5
ID = 6.67mA
4
3
2
1
0
-50
0
50 100 150 200
Junction Temperature : Tj [ºC]
Fig.11 Transconductance vs. Drain Current
10
VDS = 10V
Pulsed
1
0.1
0.1
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = ï25ºC
1
10
Drain Current : ID [A]
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
7/12
2017.08- Rev.C
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese