SCT3060AL Datasheet, PDF (4/14 Pages) Rohm – N-channel SiC power MOSFET

SCT3060AL
Datasheet
Body diode electrical characteristics (Source-Drain) (T_a = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Inverse diode continuous,
forward current
Inverse diode direct current,
pulsed
Forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
I_S ^*1
I_SM ^*2
T_c = 25°C
V_SD ^*3
t_rr ^*3
Q_rr ^*3
I_rrm ^*3
V_GS = 0V, I_S = 13A
I_F = 13A, V_R = 300V
di/dt = 1100A/s
-
-
39
A
-
-
97
A
-
3.2
-
V
-
15
-
ns
-
55
-
nC
-
8
-
A
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2017.08- Rev.C