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RGTV60TS65 Datasheet, PDF (7/11 Pages) Rohm – 650V 30A Field Stop Trench IGBT
RGTV60TS65
Electrical Characteristic Curves
Fig.13 Typical Switching Energy Losses
vs. Collector Current
10
Datasheet
Fig.14 Typical Switching Energy Losses
vs. Gate Resistance
10
1
Eoff
0.1
0.01
0
Eon
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
10 20 30 40 50 60
Collector Current : IC [A]
1
Eoff
Eon
0.1
0.01
0
VCC=400V, IC=30A
VGE=15V, Tj=175ºC
Inductive load
10
20
30
40
50
Gate Resistance : RG [Ω]
Fig.15 Typical Capacitance
vs. Collector To Emitter Voltage
10000
Cies
1000
100
Coes
10
1
0.01
f=1MHz
VGE=0V
Tj=25ºC
0.1
Cres
1
10
100
Collector To Emitter Voltage : VCE[V]
Fig.16 Typical Gate Charge
15
10
5
VCC=400V
IC=30A
Tj=25ºC
0
0 10 20 30 40 50 60 70
Gate Charge : Qg [nC]
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2017.05 - Rev.A