RGTV60TS65 Datasheet, PDF (3/11 Pages) Rohm – 650V 30A Field Stop Trench IGBT

RGTV60TS65
Datasheet
IGBT Electrical Characteristics (at T_j = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Input Capacitance
C_ies V_CE = 30V
-
1730
-
Output Capacitance
C_oes V_GE = 0V
-
74
-
pF
Reverse Transfer Capacitance
C_res f = 1MHz
-
30
-
Total Gate Charge
Q_g V_CE = 400V
-
64
-
Gate - Emitter Charge
Q_ge I_C = 30A
-
14
-
nC
Gate - Collector Charge
Q_gc V_GE = 15V
-
24
-
Turn - on Delay Time
t_d(on) I_C = 30A, V_CC = 400V
-
33
-
Rise Time
Turn - off Delay Time
t_r
V_GE = 15V, R_G = 10Ω
-
12
-
ns
t_d(off) T_j = 25°C
-
105
-
Fall Time
t_f Inductive Load
-
40
-
Turn - on Switching Loss
Turn - off Switching Loss
E_on *E_on includes diode
E_off reverse recovery
-
0.57
-
mJ
-
0.50
-
Turn - on Delay Time
t_d(on) I_C = 30A, V_CC = 400V
-
32
-
Rise Time
Turn - off Delay Time
t_r
V_GE = 15V, R_G = 10Ω
-
13
-
ns
t_d(off) T_j = 175°C
-
121
-
Fall Time
t_f Inductive Load
-
80
-
Turn - on Switching Loss
Turn - off Switching Loss
E_on *E_on includes diode
E_off reverse recovery
-
0.63
-
mJ
-
0.72
-
I_C = 120A, V_CC = 520V
Reverse Bias Safe Operating Area RBSOA V_P = 650V, V_GE = 15V
FULL SQUARE
-
R_G = 100Ω, T_j = 175°C
V_CC ≦ 360V
Short Circuit Withstand Time
t_sc
V_GE = 15V
2
-
-
μs
T_j = 25°C
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2017.05 - Rev.A