BU90T82 Datasheet, PDF (6/28 Pages) Rohm – Support clock frequency from 10MHz up to 174MHz

BU90T82
Datasheet
Absolute Maximum Ratings (Ta = 25°C)
Parameter
Supply Voltage
Symbol
VDDIO
VDD
Rating
Min
Max
1.62
3.6
1.62
1.98
Units
V
V
Input Voltage
Output Voltage
Storage Temperature Range
V_IN
V_OUT
Tstg
-0.3
VDDIO+0.3
V
-0.3
VDD+0.3
V
-55
125
℃
Power Dissipation^(Note１)
P_d
0.86
W
(Note1) Package power when IC mounting on the PCB board.
The size of PCB board
: 114.3×76.2×1.6（mm³ï¼‰
The material of PCB board
: The FR4 glass epoxy board.
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Recommended Operating Conditions (Ta= -40°C to +85°C)
Parameter
Symbol
Min
Rating
Typ
Max
Supply Voltage
VDD
VDDIO
1.62
1.8
1.62 1.8 / 2.5 / 3.3
1.98
3.6
Operating
Temperature Range
Ta
-40
-
85
Freq_in
20
-
174
Freq_out
10
-
87
Operating
Freq_in
10
-
174
Frequency
Freq_out
10
-
174
Freq_in
10
-
174
Freq_out
10
-
174
Units
V
V
℃
MHz
MHz
MHz
MHz
MHz
MHz
Condition
-
-
-
MODE=L
Dual-Out
Single Edge
(DDRN=H)
Double Edge
(DDRN=L)
MODE=H
Single-Out, Distribution-Out
DC Characteristics
Table 1. LVCMOS DC Specifications（VDDIO=1.62V~3.6V, VDD=1.62~1.98V, Ta=-40℃~+85℃）
Symbol
Parameter
Limits
Units
Min
Typ
Max
V_IH
High Level Input Voltage VDDIO×0.65
-
VDDIO
V
V_IL
Low Level Input Voltage
GND
-
VDDIO×0.35 V
I_inc
Input Current
-10
-
+10
μA
Conditions
-
0V≤V_IN≤VDDIO
Table 2. LVDS Transmitter DC Specifications（VDDIO=1.62V~3.6V, VDD=1.62V~1.98V, Ta=-40℃~+85℃）
Symbol
Parameter
Limits
Units
Conditions
Min
Typ
Max
V_OD
ΔV_OD
V_OC
ΔV_OC
I_os
I_oz
Differential Output Voltage
Change in VOD between
complementary output states
Common Mode Voltage
Change in VOC between
complementary output states
Output Short Circuit Current
Output TRI-STATE Current
250
140
-
1.125
-
-
-10
350
200
-
1.25
-
100
-
450
300
35
1.375
35
150
+10
mV
RS = H
RL=100Ω
mV
RS = L
mV
V
RL=100Ω
mV
mA
V_OUT=GND
μA
PWDN=0V,
V_OUT=0V to VDD
〇Product structure : Silicon monolithic integrated circuit
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© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 14 • 001
〇This product has no designed protection against radioactive rays
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TSZ02201-0L2L0H500270-1-2
23.Mar.2015 Rev.002