English
Language : 

SH8M12 Datasheet, PDF (5/11 Pages) Rohm – 4V Drive Nch + Pch MOSFET
SH8M12
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
1000
VGS= 4.0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
100
10
0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
10
VGS=0V
Pulsed
1
Ta=125°C
Ta=75°C
0.1
Ta=25°C
Ta=-25°C
0.01
0
1000
100
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.11 Switching Characteristics
td(off)
tf
Ta=25°C
VDD=15V
VGS=10V
RG=10W
Pulsed
td(on)
10
tr
1
0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
 
Data Sheet
Fig.8 Forward Transfer Admittance
vs. Drain Current
10
VDS= 10V
Pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
100
Ta=25°C
Pulsed
80
ID= 2.5A
ID= 5.0A
60
40
20
0
0
10
5
10
GATE-SOURCE VOLTAGE : VGS[V]
Fig.12 Dynamic Input Characteristics
8
6
4
2
Ta=25°C
VDD= 15V
ID= 5.0A
Pulsed
0
0
2
4
6
8
10
TOTAL GATE CHARGE : Qg [nC]
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/10
2011.05 - Rev.A