SH8M12 Datasheet, PDF (1/11 Pages) Rohm – 4V Drive Nch + Pch MOSFET

Data Sheet
4V Drive Nch + Pch MOSFET
SH8M12
 Structure
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) High power package(SOP8).
3) Low voltage drive(4V drive).
Dimensions (Unit : mm)
SOP8
(8)
(5)
(1)
(4)
 Application
Switching
Inner circuit
(8)
(7) (6)
(5)
 Packaging specifications
Package
Taping
Type
SH8M12
Code
Basic ordering unit (pieces)
TB
2500

 Absolute maximum ratings (Ta = 25C)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Parameter
Symbol
Limits
Unit
Tr1 : N-ch Tr2 : P-ch
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
V_DSS
V_GSS
I_D
I_DP ^*1
I_s
I_sp ^*1
*2
P_D
30
30
20
20
5
4.5
20
18
1.6
1.6
20
18
2.0
1.4
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
Channel temperature
Range of storage temperature
Tch
150
C
Tstg
55 to 150
C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
∗2
∗2
∗1
∗1
(1)
(2) (3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
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2011.05 - Rev.A