SCT2280KE Datasheet, PDF (5/14 Pages) Rohm – N-channel SiC power MOSFET

SCT2280KE
Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
120
100
80
60
40
20
0
0
50
100
150
200
Junction Temperature : T_j [°C]
Datasheet
Fig.2 Maximum Safe Operating Area
100
P_W = 100s
P_W = 1ms
P_W = 10ms
10
P_W = 100ms
1
Operation in this
area is limited
by R_DS(on)
T_a=25ºC
Single Pulse
0.1
0.1
1
10 100
1000 10000
Drain - Source Voltage : V_DS [V]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
10
T_a=25ºC
Single Pulse
1
0.1
0.01
0.0001 0.001 0.01 0.1
1
10
Pulse Width : P_W [s]
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2017.07 - Rev.D