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SCT2280KE Datasheet, PDF (1/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT2280KE
N-channel SiC power MOSFET
Datasheet
VDSS
RDS(on) (Typ.)
ID
PD
1200V
280mï
14A
108W
ï¬Features
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
ï¬Application
⢠Solar inverters
⢠DC/DC converters
⢠Switch mode power supplies
⢠Induction heating
⢠Motor drives
ï¬Outline
TO-247
ï¬Inner circuit
(1) (2) (3)
(2)
(1) Gate
(2) Drain
*1
(3) Source
(1)
*1 Body Diode
(3)
ï¬Packaging specifications
Packaging
Tube
Reel size (mm)
-
Tape width (mm)
-
Type
Basic ordering unit (pcs)
30
Packing code
C
Marking
SCT2280KE
ï¬Absolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (Tsurge Ë 300nsec)
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Symbol
Value
Unit
VDSS
1200
V
ID *1
14
A
ID *1
10
A
ID,pulse *2
35
A
VGSS
ï6 to 22
V
VGSS-surge*3
ï10 to 26
V
PD
108
W
Tj
175
°C
Tstg
ï55 to ï«175
°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/12
2017.07 - Rev.D
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