RV1C002UN Datasheet, PDF (5/11 Pages) Rohm – Nch 20V 150mA Small Signal MOSFET

RV1C002UN
lElectrical characteristic curves
Data Sheet
Fig.5 Breakdown Voltage
vs. Junction Temperature
50
V_GS = 0V
45 ^ID ^{= 1mA}
Pulsed
40
35
30
25
20
-50
0
50
100
150
Junction Temperature : T_j [°C]
Fig.6 Typical Transfer Characteristics
1
V_DS= 10V
0.1
0.01
T_a=125ºC
T_a=75ºC
T_a=25ºC
T_a= -25ºC
0.001
0
0.5
1
1.5
2
Gate - Source Voltage : V_GS [V]
Fig.7 Gate Threshold Voltage
vs. Junction Temperature
2.0
1.8 ^{VDS = 10V}
I_D = 1mA
1.6 _Pulsed
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
0
50
100
150
Junction Temperature : T_j [°C]
Fig.8 Transconductance vs. Drain Current
10
V_DS= 10V
1
T_a= -25ºC
T_a=25ºC
0.1
T_a=75ºC
T_a=125ºC
0.01
0.01
0.1
1
Drain Current : I_D [A]
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2012.08 - Rev.A