RV1C002UN Datasheet, PDF (2/11 Pages) Rohm – Nch 20V 150mA Small Signal MOSFET

RV1C002UN
Data Sheet
lElectrical characteristics(T_a = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V_(BR)DSS V_GS = 0V, I_D = 1mA
20
-
-
V
Zero gate voltage drain current
I_DSS V_DS = 20V, V_GS = 0V
-
-
1
mA
Gate - Source leakage current
I_GSS V_GS = 8V, V_DS = 0V
-
-
10 mA
Gate threshold voltage
V_{GS (th)} V_DS = 10V, I_D = 100mA 0.3
-
1.0
V
V_GS=4.5V, I_D=150mA
-
1.4
2.0
V_GS=2.5V, I_D=150mA
-
1.7
2.6
Static drain - source
on - state resistance
R_DS(on) ^{*4 VGS=1.8V, ID=150mA}
-
2.2
3.4
W
V_GS=1.5V, I_D=20mA
-
2.7
5.4
V_GS=1.2V, I_D=10mA
-
3.8 11.4
Transconductance
V_GS=4.5V, I_D=150mA, T_j=125°C
-
2.3 4.6
g_fs ^{*4 V}_DS^{=10V, I}_D^=150mA
110
-
-
mS
*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 Each therminal mounted on a recommended land
*4 Pulsed
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2012.08 - Rev.A