UMF9N Datasheet, PDF (4/6 Pages) Rohm – Power management (dual transistors)

Transistors
Tr2
200m
VDS=3V
100m Pulsed
50m
20m
10m
5m
2m
Ta=125°C
1m
75°C
25°C
0.5m
−25°C
0.2m
0.1m
0
1
2
3
4
GATE-SOURCE VOLTAGE : VGS (V)
Fig.9 Typical transfer characteristics
2
VDS=3V
ID=0.1mA
Pulsed
1.5
1
0.5
0
−50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.10 Gate threshold voltage vs.
channel temperature
UMF9N
50
20
Ta=125°C
75°C
25°C
10
−25°C
5
VGS=4V
Pulsed
2
1
0.5
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
Fig.11 Static drain-source on-state
resistance vs. drain current ( Ι )
50
Ta=125°C
20
75°C
25°C
−25°C
10
5
VGS=2.5V
Pulsed
2
1
0.5
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
Fig.12 Static drain-source on-state
resistance vs. drain current ( ΙΙ )
15
Ta=25°C
Pulsed
10
5
ID=0.1A
ID=0.05A
0
0
5
10
15
20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.13 Static drain-source on-state
resistance vs. gate-source
voltage
9
VGS=4V
8
Pulsed
7
ID=100mA
6
5
ID=50mA
4
3
2
1
0
−50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.14 Static drain-source on-state
resistance vs. channel
temperature
0.5
0.2
Ta=−25°C
0.1
25°C
0.05
75°C
125°C
0.02
0.01
0.005
VDS=3V
Pulsed
0.002
0.001
0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
Fig.15 Forward transfer admittance vs.
drain current
200m
100m
50m
VGS=0V
Pulsed
20m
Ta=125°C
10m
75°C
5m
25°C
−25°C
2m
1m
0.5m
0.2m
0.1m
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.16 Reverse drain current vs.
source-drain voltage ( Ι )
200m
Ta=25°C
100m
Pulsed
50m
20m
10m VGS=4V
0V
5m
2m
1m
0.5m
0.2m
0.1m
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.17 Reverse drain current vs.
source-drain voltage ( ΙΙ )
4/5