UMF9N Datasheet, PDF (3/6 Pages) Rohm – Power management (dual transistors)

Transistors
!Electrical characteristic curves
Tr1
1000
1000
VCE=2V
Pulsed
100
100
Ta=125°C
Ta=25°C
Ta=−40°C
VCE=2V
Pulsed
1000
Ta=25°C
Pulsed
100
UMF9N
10
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
IC/IB=50
10
10 _IC/IB=20
IC/IB=10
1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.2 DC current gain vs.
collector current
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )
1000
IC/IB=20
Pulsed
100
Ta=125°C
25°C
−40°C
10
10000
1000
100
IC/IB=20
Pulsed
Ta=25°C
Ta=−40°C
Ta=125°C
1000
VCE=2V
Ta=25°C
Pulsed
100
10
1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
10
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.5 Base-emitter saturation voltage
vs. collector current
1
1
10
100
1000
EMITTER CURRENT : IE (mA)
Fig.6 Gain bandwidth product
vs. emitter current
1000
10
IE=0A
Ta=25°C
f=1MHz
Single Pulsed
Ta=25°C
100
Cib
1
1ms
10ms
100ms
DC
0.1
10
Cob
0.01
1
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB(V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
0.001
0.01
0.1
1
10
100
EMITTER CURRENT : VCE (V)
Fig.8 Safe operation area
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