TT8U2_12 Datasheet, PDF (4/6 Pages) Rohm – 1.5V Drive Pch +SBD MOSFET

TT8U2
　
DataSheet
10
V_GS=0V
Pulsed
1
0.1
Ta=125°C
Ta=75°C
Ta=25°C
0.01
Ta=−25°C
0.001
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : -V_SD [V]
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
250
Ta=25°C
Pulsed
200
I_D= −1.2A
150
I_D= −2.4A
100
50
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE : -V_GS[V]
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
10000
1000
100
Ta=25°C
V_DD= −10V
t_f
t_d(off)
V_GS= −4.5V
R_G=10Ω
Pulsed
10
t_r
t_d(on)
1
0.01
0.1
1
10
DRAIN-CURRENT : -I_D[A]
Fig.12 Switching Characteristics
5
4
3
2
Ta=25°C
V_DD= −10V
1
I_D= −2.4A
R_G=10Ω
Pulsed
0
0
2
4
6
8
TOTAL GATE CHARGE : Qg [nC]
Fig.13 Dynamic Input Characteristics
10000
1000
Ta=25°C
f=1MHz
V_GS=0V
C_iss
C_oss
100
C_rss
10
0.01
0.1
1
10
100
GATE-SOURCE VOLTAGE : -V_DS[V]
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
<Di>
100000
10000
pulsed
1000
100
Ta = 125°C
Ta = 75°C
10
Ta = 25°C
1
Ta= −25°C
0.1
0.01
0
5
10 15 20 25 30
REVERSE VOLTAGE : V_R [V]
Fig.1 Reverse Current vs. Reverse Voltage
1
pulsed
0.1
Ta=125°C
0.01
Ta=75°C
Ta=25°C
Ta= −25°C
0.001
0
100 200 300 400 500 600
FORWARD VOLTAGE : V_F[mV]
Fig.2 Forward Current vs. Forward Voltage
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2012.02 - Rev.B