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TT8U2_12 Datasheet, PDF (1/6 Pages) Rohm – 1.5V Drive Pch +SBD MOSFET | |||
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1.5V Drive Pch +SBD MOSFET
TT8U2
ï¬Structure
Silicon P-channel MOSFET / schottky barrier diode
ï¬Features
1) Pch MOSFET and shottky barrier diode are put in TSST8 package.
2) High-speed switching and Low on-resistance.
3) Low voltage drive(1.5V).
4) Built in Low IR shottky barierr daiode.
ï¬Applications
Switching
ï¬Dimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : U02
ï¬Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
TT8U2
Taping
TR
3000
ï¡
ï¬Absolute maximum ratings (Ta = 25ï°C)
<MOSFET>
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Channel temperature
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP
IS
ISP*1
Tch
PD*2
*1 Pwï£10ïs, Duty cycleï£1%
*2 Mounted on a ceramic board.
ï¬Inner circuit
(8)
(7)
(6)
(5)
Limits
ï20
ï±10
ï±2.4
ï±9.6
ï0.8
ï9.6
150
1.0
Unit
V
V
A
A
A
A
ï°C
W / ELEMENT
(1) ANODE
(2) ANODE
(3) SOURCE
(4) GATE
(5) DRAIN
(6) DRAIN
(7) CATHODE
(8) CATHODE
â1
(1)
(2)
(3)
(4)
â1 BODY DIODE
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
*1 60Hz / 1Cycle
*2 Mounted on a ceramic board
Symbol
VRM
VR
IF
IFSM*1
Tj
PD*2
Limits
30
20
1.0
3.0
150
1.0
Unit
V
V
A
A
ï°C
W / ELEMENT
<MOSFET and Di>
Parameter
Total power dissipation
Range of Storage temperature
* Mounted on a ceramic board
Symbol
PD*
Tstg
Limits
1.25
ï55 to ï«150
Unit
W / TOTAL
ï°C
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©2012 ROHM Co., Ltd. All rights reserved.
1/5
2012.02 - Rev.B
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