SH8J66 Datasheet, PDF (4/6 Pages) Rohm – 4V Drive Pch+Pch MOSFET

SH8J66
Data Sheet
50
10000
Ta=25°C
45
Pulsed
40
1000
35
ID= -9.0A
30
100
25
ID= -4.5A
t_d(off)
tf
Ta=25°C
VDD= -15V
VGS=-10V
R_G=10Ω
Pulsed
20
10
15
tr
td(on)
10
1
0
5
10
15
0.01
0.1
1
10
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
FigD.1R1ASINw-itCchUinRgRCEhNaTra:c-teI^Dr[iAst]ics
10
8
6
4
Ta=25°C
V_DD= -15V
2
ID= -9.0A
RG=10Ω
Pulsed
0
0 10 20 30 40 50 60 70
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
10000
Ciss
1000
Crss
100
Coss
10
0.01
0.1
1
Ta=25°C
f=1MHz
VGS=0V
10
100
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
1000
100
Operation in this area is limited by RDS(on)
(VGS=-10V)
PW= 100us
10
PW = 10ms
1
PW= 1ms
0.1 _{Ta = 25°C}
Single Pulse
MOUNTED ON CERAMIC BOARD
0.01
DC operation
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.14 Maximum Safe Operating Aera
10
1
0.1
0.01
0.001
0.001
0.01
Ta = 25°C
Single Pulse : 1Unit
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 89.3 °C/W
<Mounted on a CERAMIC board>
0.1
1
10
100
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
1000
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2010.01 - Rev.A