SH8J66 Datasheet, PDF (2/6 Pages) Rohm – 4V Drive Pch+Pch MOSFET

SH8J66
Electrical characteristics (Ta=25C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 μA VGS=±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −30 −
−
V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
−1 μA VDS= −30V, VGS=0V
Gate threshold voltage
VGS (th) −1.0 − −2.5 V VDS= −10V, ID= −1mA
−
Static drain-source on-state
resistance
RDS
∗
(on)
−
−
Forward transfer admittance
Yfs ^∗ 11
13.5 18.5
17.5 23.6
19.0 24.7
−
−
mΩ ID= −9A, VGS= −10V
mΩ ID= −4.5A, VGS= −4.5V
mΩ ID= −4.5A, VGS= −4.0V
S VDS= −10V, ID= −9A
Input capacitance
Ciss
− 3000 −
pF VDS= −10V
Output capacitance
Coss
− 400 −
pF VGS=0V
Reverse transfer capacitance Crss
−
Turn-on delay time
td (on) ^∗ −
Rise time
tr ^∗ −
Turn-off delay time
td (off) ^∗ −
Fall time
tf ^∗ −
Total gate charge
Qg ^∗ −
Gate-source charge
Qgs ^∗ −
Gate-drain charge
Qgd ^∗ −
400 −
20 −
60 −
170 −
100 −
35 −
9
−
12 −
pF f=1MHz
ns VDD −15V
ns ^{ID= −4.5A}
VGS= −10V
ns _RL=3.3Ω
ns RG=10Ω
nC ^{VDD −15V}
nC
ID= −9A
VGS= −5V
nC RL=1.7Ω / RG=10Ω
∗Pulsed
Body diode characteristics (Source-drain) (Ta=25C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
VSD ^∗
−
− −1.2 V
∗ Pulsed
Conditions
IS= −9A, VGS=0V
Data Sheet
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2010.01 - Rev.A