SH8J62TB1 Datasheet, PDF (4/6 Pages) Rohm – 4V Drive Pch Pch MOSFET

SH8J62
200
10000
Ta=25°C
Ta=25°C
150
Pulsed
I_D= -4.5A
1000
t_d(off)
V_DD= -15V
V_GS=-10V
I_D= -2.5A
t_f
R_G=10Ω
Pulsed
100
100
t_r
t_d(on)
50
10
0
0
5
10
15
GATE-SOURCE VOLTAGE : -V_GS[V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1
0.01
0.1
1
10
DRAIN-CURRENT : -I_D[A]
Fig.11 Switching Characteristics
Data Sheet
10
8
6
4
Ta=25°C
V_DD= -15V
I_D= -4.5A
2
R_G=10Ω
Pulsed
0
0
5
10
15
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
10000
1000
Ta=25°C
f=1MHz
V_GS=0V
Ciss
100
Coss
10
0.01
0.1
Crss
1
10
100
DRAIN-SOURCE VOLTAGE : -V_DS[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
1000
100
Operation in this area is limited by RDS(on)
(VGS=-10V)
PW = 1ms
PW=100us
10
1
PW=10ms
DC operation
0.1
0.01
Ta = 25°C
Single Pulse
MOUNTED ON CERAMIC BOARD
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : -V_DS[V]
Fig.14 Maximum Safe Operating Area
10
1
0.1
0.01
0.001
0.001
0.01
Ta = 25°C
Single Pulse : 1Unit
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 89.3 °C/W
<Mounted on a CERAMIC board>
0.1
1
10
PULSE WIDTH : Pw(s)
100
1000
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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2010.01 - Rev.A