SH8J62TB1 Datasheet, PDF (1/6 Pages) Rohm – 4V Drive Pch Pch MOSFET

4V Drive Pch+Pch MOSFET
SH8J62
Structure
Silicon P-channel MOSFET
Features
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Switching
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
SH8J62
Taping
TB
2500
Inner circuit
(8)
(7)
(6)
(5)
∗2
∗2
∗1
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Absolute maximum ratings (Ta=25C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Tch
Tstg
Limits
−30
±20
±4.5
±18
−1.6
−18
2.0
1.4
150
−55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
www.rohm.com
1/5
○^c 2010 ROHM Co., Ltd. All rights reserved.
2010.01 - Rev.A