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SCT3040KL Datasheet, PDF (4/14 Pages) Rohm – N-channel SiC power MOSFET
SCT3040KL
Datasheet
Body diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Inverse diode continuous,
forward current
Inverse diode direct current,
pulsed
Forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
IS *1
ISM *2
Tc = 25°C
VSD *3
trr *3
Qrr *3
Irrm *3
VGS = 0V, IS = 20A
IF = 20A, VR = 600V
di/dt = 1100A/s
-
-
55
A
-
-
137
A
-
3.2
-
V
-
25
-
ns
-
115
-
nC
-
9
-
A
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