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| SCT3040KL Datasheet, PDF (10/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT3040KL
ï¬Electrical characteristic curves
Datasheet
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
500
450
Ta = 25ºC
ID=20A
400
VGS = 18V/0V
350
RG=0ï
L=250ïH
Eon
300
250
200
150
100
Eoff
50
0
200
400
600
800
1000
Drain - Source Voltage : VDS [V]
Fig.20 Typical Switching Loss
vs. Drain Current
1800
1600
Ta = 25ºC
VDD=600V
1400
VGS = 18V/0V
RG=0ï
1200 L=250ïH
Eon
1000
800
600
400
Eoff
200
0
0
10 20
30 40 50 60
Drain Current : ID [A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
1800
1600
1400
1200
Ta = 25ºC
VDD=600V
ID=20A
VGS = 18V/0V
L=250ïH
1000
800
600
Eon
Eoff
400
200
0
0
5 10 15 20 25 30
External Gate Resistance : RG [ï]
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© 2016 ROHM Co., Ltd. All rights reserved.
10/12
2017.08 - Rev.D
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