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RZF020P01 Datasheet, PDF (4/5 Pages) Rohm – 1.5V Drive Pch MOSFET | |||
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RZF020P01
10
VGS=0V
Pulsed
1
Ta=125°C
0.1
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
500
Ta=25°C
Pulsed
400
300
ID= -1A
ID= -2A
200
100
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Data Sheet
1000
100
td(off)
tf
Ta=25°C VDD= -6V
VGS=-4.5V RG=10â¦
Pulsed
10
1
0.01
tr
td(on)
0.1
1
10
DRAIN-CURRENT : -ID[A]
Fig.12 Switching Characteristics
5
4
3
2
Ta=25°C
VDD= -6V
1
ID= -2.0A
RG= 10â¦
Pulsed
0
0 1 23 4 5 67 8
TOTAL GATE CHARGE : Qg [nC]
Fig.13 Dynamic Input Characteristics
10000
Ta=25°C
f=1MHz
VGS=0V
1000
100
Crss
Ciss
Coss
10
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
zMeasurement circuit
VGS
RG
ID
D.U.T.
VDS
RL
VDD
Fig.1-1 Switching Time Measurement Circuit
Pulse width
VGS
10%
50%
50%
90%
10%
10%
VDS
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching Waveforms
VGS
IG (Const.)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.2-1 Gate Charge Measurement Circuit
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate Charge Waveform
zNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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âc 2009 ROHM Co., Ltd. All rights reserved.
4/4
2009.05 - Rev.A
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