RZF020P01 Datasheet, PDF (1/5 Pages) Rohm – 1.5V Drive Pch MOSFET

1.5V Drive Pch MOSFET
RZF020P01
zStructure
Silicon P-channel MOSFET
zDimensions (Unit : mm)
TUMT3
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TUMT3).
4) Low voltage drive (1.5V).
zApplications
Switching
(1) Gate
(2) Source
(3) Drain
Abbreviated symbol : ZE
zInner circuit
(3)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RZF020P01
Taping
TL
3000
∗2
(1)
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
−12
V
Gate-source voltage
VGSS
±10
V
Continuous
ID
±2
A
Drain current
Pulsed
IDP ^∗1
±6
A
Source current
Continuous
IS
−0.6
A
(Body diode)
Pulsed
ISP ^∗1
−6
A
Total power dissipation
PD ^∗2
0.8
W
Channel temperature
Tch
150
°C
Range of Storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a ceramic board.
Symbol
Rth (ch-a) ^∗
Limits
156
Unit
°C / W
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2009.05 - Rev.A